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Market cooperation| 发包方名称 | National University Corporation - Miyagi |
| 发包方国别(国家/地区) | 日本 |
| 发包方座机 | |
| 发包方传真 | |
| 发包方邮箱 | |
| 发包方地址 | Procurement Services Office, Finance Department, Tohoku University, 2-1-1 Katahira Aoba-ku Sendai-shi 980-8577 Japan |
| 发包方网址 | |
| 发包方联系人姓名 | Shigehiro Akiyama |
| 发包方联系人座机 | |
| 发包方联系人手机 | 022-217-4869 |
| 发包方联系人邮箱 | |
| 项目名称 | Spintronics Material Deposition and Device Fabrication System 1 Set |
| 项目类型 | 其他 - 其他 |
| 项目预算￥ | |
| 项目投标截止时间 | 2022-07-07 |
| 项目开始时间 | |
| 项目结束时间 | |
| 服务商资质要求 | |
| 要求高匹配度成功案例个数 | |
| 项目交付地点 | |
| 是否准许转包或分包 | |
| 项目信息详述 |
⑴ Classification of the products to be procured : 24
⑵ Nature and quantity of the products to be purchased : Spintronics Material Deposition and Device Fabrication System 1 Set
⑶ Type of the procurement : Purchase
⑷ Basic requirements of the procurement :
A Innovative spintronics materials deposition equipment
a Thin film can be deposited by DC and RF magnetron sputtering on 300 mmΦ substrate using more than three type of gases under ultra-high vacuum background pressure.
b More than 50 substrates can be sequentially processed by program control.
c More than 16 cathodes are equipped and co-sputtering deposition using more than 2 cathodes is possible.
d Temperature of substrate can be controlled at any temperature in the range including 50~200℃ and 350~450℃ during deposition, and can controlled at any temperature in the range including 80~200K (-193~-73℃) and 300~600℃ before deposition or after deposition.
e Magnetic tunnel junction film with perpendicular magnetic easy axis that comprises CoFeB and MgO and that shows the following properties at the measurement temperature ranging from 0 to 30℃ after annealing at 400℃ can be prepared on substrate within 90 minutes.
⑴ Difference between reversal fields of free and fixed is more than 50 mT.
⑵ Tunnel magnetoresistance ratio is more than 160%.
⑶ Product of resistance and junction area (RA) is less than 10 Ωμ㎡.
⑷ Variability of RA in the central region of substrate over 130 mm in radius is less than ±5%.
f More than 4 extension modules including device fabrication process module are connectable.
B Spintronics device fabrication equipment
a Thin film can be deposited by DC magnetron sputtering on 300 mmΦ substrate using more than three type of gases under ultra-high vacuum background pressure.
b More than 4 cathodes are equipped and co-sputtering deposition using more than 2 cathodes is possible.
c Temperature of substrate can be controlled at any temperature in the range including 350~450℃ during deposition.
d Thin films on substrate with the diameter of 300 mm can be etched with rotating and changing the angle between substrate and etching source from 0 to 90 degree, where 0 degree means that normal to the substrate is align to normal to the etching source.
e Etching end point can be detected.
f Connectable with (A) Innovative spintronics materials deposition equipment and capable to deposit and etch 300 mmΦ substrate transferred from the system by program control.
⑸ Time limit for the submission of the requested material : 17 : 00 7 July, 2022
⑹ Contact point for the notice : Shigehiro Akiyama, Procurement Services Office, Finance Department, Tohoku University, 2-1-1 Katahira Aoba-ku Sendai-shi 980-8577 Japan, TEL 022-217-4869
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